Invention Grant
- Patent Title: Solid-state imaging element and imaging device
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Application No.: US18245900Application Date: 2021-07-28
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Publication No.: US12212872B2Publication Date: 2025-01-28
- Inventor: Mamoru Sato , Hideki Naganuma
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: CHIP LAW GROUP
- Priority: JP2020-161603 20200928
- International Application: PCT/JP2021/027900 WO 20210728
- International Announcement: WO2022/064835 WO 20220331
- Main IPC: H04N25/778
- IPC: H04N25/778 ; H01L27/146 ; H04N25/709

Abstract:
To improve an image quality in a solid-state imaging element that performs differential amplification. A reference-side amplification transistor supplies a reference current corresponding to a predetermined reference potential. A read-side amplification transistor supplies a signal current corresponding to a difference between a potential of a gate and the reference potential from a drain to a source. A pair of reset transistors initializes the potential of the gate and the reference potential. A potential control circuit controls a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.
Public/Granted literature
- US20240357260A1 SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE Public/Granted day:2024-10-24
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