Invention Grant
- Patent Title: Fully-wet via patterning method in piezoelectric sensor
-
Application No.: US17869845Application Date: 2022-07-21
-
Publication No.: US12213383B2Publication Date: 2025-01-28
- Inventor: Ting-Jung Chen , Ming Chyi Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H10N30/87
- IPC: H10N30/87 ; H10N30/063 ; H10N30/082 ; H10N30/50

Abstract:
Various embodiments of the present disclosure are directed towards an integrated chip including a piezoelectric membrane overlying a substrate. A plurality of conductive layers is disposed within the piezoelectric membrane. The plurality of conductive layers comprises a first conductive layer over a second conductive layer. The first conductive layer comprises a first electrode and the second conductive layer comprises a second electrode. A first conductive via is disposed in the piezoelectric membrane and contacts the first electrode. A second conductive via is disposed in the piezoelectric membrane and contacts the second electrode. A sidewall of the second conductive via comprises a vertical sidewall segment overlying a slanted sidewall segment.
Public/Granted literature
- US20220367784A1 FULLY-WET VIA PATTERNING METHOD IN PIEZOELECTRIC SENSOR Public/Granted day:2022-11-17
Information query