Invention Grant
- Patent Title: Memory readout circuit and method
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Application No.: US18601100Application Date: 2024-03-11
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Publication No.: US12217810B2Publication Date: 2025-02-04
- Inventor: Chih-Min Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G11C11/16 ; G11C17/16

Abstract:
A circuit includes a plurality of anti-fuse cells coupled to a first selection circuit, a plurality of magnetic random-access memory (MRAM) cells coupled to a second selection circuit, an amplifier including a first input terminal coupled to each of the first and second selection circuits, an analog-to-digital converter (ADC) including input terminals coupled to output terminals of the amplifier, and a comparator including a first input port coupled to an output port of the ADC. The amplifier, ADC, and comparator are configured to output data bits from the comparator responsive to current levels received from the first selection circuit at the first input terminal of the amplifier and first voltage levels received from the second selection circuit at the first input terminal of the amplifier.
Public/Granted literature
- US20240212771A1 MEMORY READOUT CIRCUIT AND METHOD Public/Granted day:2024-06-27
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