Invention Grant
- Patent Title: Method of making 3D segmented devices for enhanced 3D circuit density
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Application No.: US17521279Application Date: 2021-11-08
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Publication No.: US12218011B2Publication Date: 2025-02-04
- Inventor: Mark Gardner , H. Jim Fulford
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8238 ; H01L27/02 ; H01L27/06 ; H01L27/092 ; H01L29/66 ; H01L29/78
Abstract:
A method of microfabrication includes forming an initial vertical channel structure of semiconductor material protruding from a surface of a substrate such that the initial vertical channel structure has a current flow path that is perpendicular to the surface of the substrate. The initial vertical channel structure is segmented lengthwise into a plurality of independent vertical channel structure segments, each vertical channel structure segment having a respective current flow path that is perpendicular to the surface of the substrate.
Public/Granted literature
- US20220359294A1 METHOD OF MAKING 3D SEGMENTED DEVICES FOR ENHANCED 3D CIRCUIT DENSITY Public/Granted day:2022-11-10
Information query
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