Invention Grant
- Patent Title: ESD protection structure, ESD protection circuit, and chip
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Application No.: US17451670Application Date: 2021-10-21
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Publication No.: US12218126B2Publication Date: 2025-02-04
- Inventor: Qian Xu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
The present disclosure provides an electrostatic discharge (ESD) protection structure, an ESD protection circuit, and a chip. The ESD protection structure includes a semiconductor substrate, a first N-type well, a first P-type well, a first N-type doped portion, a first P-type doped portion, a second N-type doped portion, and a second P-type doped portion. The semiconductor substrate includes a first integrated region. The first N-type well is located in the first integrated region. The first P-type well is located in the first integrated region. The first N-type doped portion is located in the first N-type well. The first P-type doped portion is located in the first N-type well. The second N-type doped portion is located in the first P-type well. The second P-type doped portion is located on a side of the second N-type doped portion away from the first N-type well.
Public/Granted literature
- US20230040542A1 ESD PROTECTION STRUCTURE, ESD PROTECTION CIRCUIT, AND CHIP Public/Granted day:2023-02-09
Information query
IPC分类:
