Invention Grant
- Patent Title: Integrated circuit including integrated standard cell structure
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Application No.: US17735607Application Date: 2022-05-03
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Publication No.: US12218140B2Publication Date: 2025-02-04
- Inventor: In Hak Lee , Sang Shin Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2021-0143276 20211026
- Main IPC: H01L27/118
- IPC: H01L27/118

Abstract:
Integrated circuits including an integrated standard cell structure are provided. In an embodiment, an integrated circuit includes a first transistor gated by a first input and connected to a first power supply rail and an output, a second transistor gated by a second input and connected to the first power supply rail and the output, a floating third transistor and a fourth transistor that are connected to the first power supply rail and a third power supply rail, a fifth transistor gated by the first input and connected to a second power supply rail, a sixth transistor gated by the second input and connected to the second power supply rail, a seventh transistor gated by the second input and connected to the fifth transistor and the output, and an eighth transistor gated by the first input and connected to the sixth transistor and the output.
Public/Granted literature
- US20230125996A1 INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE Public/Granted day:2023-04-27
Information query
IPC分类: