Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US17414490Application Date: 2019-11-19
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Publication No.: US12218246B2Publication Date: 2025-02-04
- Inventor: Shunpei Yamazaki , Shinya Sasagawa , Katsuaki Tochibayashi , Tsutomu Murakawa , Erika Takahashi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP2018-247444 20181228,JP2018-247446 20181228,JP2019-010812 20190125,JP2019-087969 20190508
- International Application: PCT/IB2019/059909 WO 20191119
- International Announcement: WO2020/136467 WO 20200702
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L27/12 ; H01L29/66 ; H10B12/00
Abstract:
A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.
Public/Granted literature
- US20220077317A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-03-10
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