Invention Grant
- Patent Title: Semiconductor optical amplifier integrated laser
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Application No.: US18151577Application Date: 2023-01-09
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Publication No.: US12218480B2Publication Date: 2025-02-04
- Inventor: Atsushi Nakamura , Kaoru Okamoto , Masatoshi Arasawa , Tetsuya Nishida , Yasushi Sakuma , Shigetaka Hamada , Ryosuke Nakajima
- Applicant: Lumentum Japan, Inc.
- Applicant Address: JP Sagamihara
- Assignee: Lumentum Japan, Inc.
- Current Assignee: Lumentum Japan, Inc.
- Current Assignee Address: JP Sagamihara
- Agency: Harrity & Harrity, LLP
- Priority: JP2020-011661 20200128,JP2020-080669 20200430
- Main IPC: H01S5/026
- IPC: H01S5/026 ; H01S5/10 ; H01S5/12 ; H01S5/227 ; H01S5/32 ; H01S5/50 ; H01S5/028
Abstract:
A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.
Public/Granted literature
- US20230155348A1 SEMICONDUCTOR OPTICAL AMPLIFIER INTEGRATED LASER Public/Granted day:2023-05-18
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