Methods for, apparatuses with and vertical 3D memory devices are described. A vertical 3D memory device may comprise: a plurality of contacts associated with a plurality of digit lines and extending through a substrate; a plurality of word line plates separated from one another by respective dielectric layers and including a first plurality of word line plates and a second plurality of word line plates; a first dielectric material positioned between the first plurality and the second plurality of word line plates, the first dielectric material extending in a serpentine shape over the substrate; a conformal material positioned between the first dielectric material and the first and second plurality of word line plates, respectively; a plurality of spacers; a plurality of pillars coupled with the plurality of contacts; and a plurality of storage elements each comprising chalcogenide material positioned in a recess.