Invention Grant
- Patent Title: Magnesium oxide sputtering target
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Application No.: US17284003Application Date: 2019-10-09
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Publication No.: US12224166B2Publication Date: 2025-02-11
- Inventor: Hiroki Kajita , Yoshitaka Shibuya , Satoyasu Narita
- Applicant: JX Nippon Mining & Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2018-191474 20181010
- International Application: PCT/JP2019/039801 WO 20191009
- International Announcement: WO2020/075750 WO 20200416
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C01F5/02 ; C23C14/08 ; C23C14/34
Abstract:
A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.
Public/Granted literature
- US20210351023A1 MAGNESIUM OXIDE SPUTTERING TARGET Public/Granted day:2021-11-11
Information query
