Integrated mult-device chip and package
Abstract:
A protection device may include a semiconductor substrate and a thyristor-type device, formed within the semiconductor substrate, where the thyristor device extends from a first main surface of the semiconductor substrate to a second main surface of the semiconductor substrate. The protection device may include a first PN diode, formed within the semiconductor substrate; and a second PN diode, formed within the semiconductor substrate, wherein the thyristor-type device is arranged in electrical series between the first PN diode and the second PN diode.
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