Invention Grant
- Patent Title: Semiconductor device having word line structure
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Application No.: US17699331Application Date: 2022-03-21
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Publication No.: US12224328B2Publication Date: 2025-02-11
- Inventor: Cheng-Yan Ji , Wei-Tong Chen
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- Main IPC: H01L29/423
- IPC: H01L29/423 ; G11C5/06 ; H01L29/40 ; H01L29/49 ; H10B12/00

Abstract:
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a word line structure. The semiconductor substrate has an active region. The word line structure is disposed in the active region of the semiconductor substrate. The word line structure includes a first work function layer, a second work function layer, and a buffer structure. The second work function layer is on the first work function layer. The buffer structure is between the first work function layer and the second work function layer.
Public/Granted literature
- US20230299161A1 SEMICONDUCTOR DEVICE HAVING WORD LINE STRUCTURE Public/Granted day:2023-09-21
Information query
IPC分类: