Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18895947Application Date: 2024-09-25
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Publication No.: US12224331B2Publication Date: 2025-02-11
- Inventor: Katsuhiko Kawashima , Yoshinori Takami , Dai Motojima , Yusuke Kanda
- Applicant: Nuvoton Technology Corporation Japan
- Applicant Address: JP Kyoto
- Assignee: Nuvoton Technology Corporation Japan
- Current Assignee: Nuvoton Technology Corporation Japan
- Current Assignee Address: JP Kyoto
- Agency: Rimon P.C.
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/40 ; H01L29/423 ; H01L29/47 ; H01L29/66

Abstract:
A semiconductor device includes: a gate electrode including a junction portion forming a Schottky junction with a barrier layer; a projecting portion including first and second gate field plates and projecting from the junction portion; and an insulating layer including first and second sidewalls. An angle formed between a highest position of a bottom surface of the first gate field plate and a main surface of a substrate, viewed from the first position, is a second elevation angle. An angle formed between an end on the drain electrode side of a lowest portion of a bottom surface of the second gate field plate and the main surface, viewed from the first position, is a third elevation angle. The second elevation angle is larger than the third elevation angle. The bottom surface of the second gate field plate includes an inclined surface where a distance from the barrier layer monotonically increases.
Public/Granted literature
- US20250022933A1 SEMICONDUCTOR DEVICE Public/Granted day:2025-01-16
Information query
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