Invention Grant
- Patent Title: Semiconductor device with dielectric structure having enlargemant portion surrounding word line
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Application No.: US18470446Application Date: 2023-09-20
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Publication No.: US12225717B2Publication Date: 2025-02-11
- Inventor: Chung-Lin Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H10B12/00
- IPC: H10B12/00
Abstract:
A semiconductor device includes a substrate, a passing word line in the substrate, and a dielectric structure surrounding the passing word line. The dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure.
Public/Granted literature
- US20240015956A1 SEMICONDUCTOR DEVICE Public/Granted day:2024-01-11
Information query
