Upon determining that a first read operation on one memory cell of a plurality of memory cells has failed, a second read operation on the memory cell is started. In the second read operation, a second pass voltage is applied to first unselected word lines, and a first pass voltage is applied to second unselected word lines. The first unselected word lines include one or more word lines adjacent to a selected word line, and the second unselected word lines include remaining unselected word lines. The selected word line corresponds to the memory cell to be read. The first pass voltage includes a voltage applied to the first unselected word lines in the first read operation. The second pass voltage is higher than the first pass voltage.