Invention Grant
- Patent Title: Control method, semiconductor memory, and electronic device
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Application No.: US18155124Application Date: 2023-01-17
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Publication No.: US12230348B2Publication Date: 2025-02-18
- Inventor: Yoonjoo Eom , Lin Wang , Zhiqiang Zhang , Yuanyuan Gong
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202210307454.8 20220325,CN202210498332.1 20220509
- Main IPC: G11C29/14
- IPC: G11C29/14 ; G11C29/36 ; G11C29/46

Abstract:
Embodiments of the present disclosure provide a control method, a semiconductor memory, and an electronic device. When the semiconductor memory is in a preset test mode, a first Model Register (MR) and a second MR related to a Data Pin (DQ) are allowed to directly define the impedance of a Data Mask Pin (DM). The DM does not need to add definition of an output driver state and a related control circuit for the preset test mode to ensure that the preset test mode is adapted to the DM. The impedance of the DM may be tested in the preset test mode to avoid circuit processing errors.
Public/Granted literature
- US20230307081A1 CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE Public/Granted day:2023-09-28
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