Invention Grant
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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Application No.: US17576216Application Date: 2022-01-14
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Publication No.: US12230474B2Publication Date: 2025-02-18
- Inventor: Takeshi Yasui , Tetsuaki Inada , Masaki Murobayashi
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP2021-005770 20210118
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/52 ; H01L21/308 ; H01L21/67

Abstract:
There is included a process container; a gas supply system; and a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section.
Public/Granted literature
- US20220230846A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM Public/Granted day:2022-07-21
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