Invention Grant
- Patent Title: Exhaust system and process equipment
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Application No.: US17825577Application Date: 2022-05-26
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Publication No.: US12230517B2Publication Date: 2025-02-18
- Inventor: Hsien-Chang Hsieh , Chun-Chih Lin , Tah-te Shih , Wen-Hsong Wu , Chune-Te Yang , Yu-Jen Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: F01N13/08
- IPC: F01N13/08 ; F23J13/02 ; F27D17/00 ; H01L21/67

Abstract:
An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section.
Public/Granted literature
- US20220285177A1 EXHAUST SYSTEM AND PROCESS EQUIPMENT Public/Granted day:2022-09-08
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