Invention Grant
- Patent Title: Inline wafer defect detection system and method
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Application No.: US17565896Application Date: 2021-12-30
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Publication No.: US12230522B2Publication Date: 2025-02-18
- Inventor: Patrick David Noll , Suzie Ghidei
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G06T7/00 ; H01L21/66 ; H01L21/78

Abstract:
A wafer defect detection apparatus and a method of fabricating an IC using the same. Images of a plurality of semiconductor wafers forming a wafer lot are captured at a targeted process step of a fabrication flow and preprocessed, wherein a medoid image is identified as a reference wafer image. In one arrangement, preprocessed wafer images of a semiconductor wafer lot may be analyzed for defects based on an ensemble of image analysis techniques using at least one of the reference wafer image from the wafer lot and a template patch to enhance the predictive power of defect detection.
Public/Granted literature
- US20230072713A1 INLINE WAFER DEFECT DETECTION SYSTEM AND METHOD Public/Granted day:2023-03-09
Information query
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