Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor device
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Application No.: US17682952Application Date: 2022-02-28
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Publication No.: US12230623B2Publication Date: 2025-02-18
- Inventor: Masaki Sekine , Takanobu Ono
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2021-094631 20210604
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/13 ; H01L23/14 ; H01L23/15 ; H01L25/00 ; H01L25/065 ; H01L23/00

Abstract:
According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of recess portions on a first surface of a support. Each recess portion is between protrusion portions on the first surface. A stacked body is then placed into each of the recess portions. The stacked body is a plurality of semiconductor chips stacked on each other or the like. The recess portions are filled with a resin layer. The resin layer covers the stacked bodies inside the recess portions. A protrusion portion of the support is irradiated with a laser beam to form a modified portion in the protrusion portion. The support is divided along the protrusion portions into separate pieces.
Public/Granted literature
- US20220392883A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2022-12-08
Information query
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