Invention Grant
- Patent Title: Method for manufacturing semiconductor structure, semiconductor structure, and memory
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Application No.: US17452644Application Date: 2021-10-28
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Publication No.: US12230668B2Publication Date: 2025-02-18
- Inventor: Yonghao Du
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202011057546.2 20200929
- Main IPC: H01L49/02
- IPC: H01L49/02
Abstract:
A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided. A lower electrode is formed on the substrate. A capacitor dielectric layer is formed on a surface of the lower electrode. The capacitor dielectric layer includes at least one zirconium oxide layer. The capacitor dielectric layer is subjected with microwave annealing treatment to convert a crystal phase of zirconium oxide to a tetragonal crystal phase. An upper electrode is formed on a surface of the capacitor dielectric layer.
Public/Granted literature
- US20220102481A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY Public/Granted day:2022-03-31
Information query
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