Memory devices with selector layer and methods of forming the same

Invention Grant

US12232331B2 Memory devices with selector layer and methods of forming the same 有权

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Patent Title: Memory devices with selector layer and methods of forming the same
Application No.: US18479836

Application Date: 2023-10-03
Publication No.: US12232331B2

Publication Date: 2025-02-18
Inventor: Hung-Li Chiang , Jung-Piao Chiu , Tzu-Chiang Chen , Yu-Sheng Chen , Xinyu Bao
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsinchu
Agency: JCIPRNET
Main IPC: H10N70/00
IPC: H10N70/00 ; H10B63/00 ; H10N70/20

Memory devices with selector layer and methods of forming the same

Abstract:

A memory device includes a first electrode, a selector layer and a plurality of first work function layers. The first work function layers are disposed between the first electrode and the selector layer, and a work function of the first work function layer increases as the first work function layer becomes closer to the selector layer.

Public/Granted literature

US20240032309A1 MEMORY DEVICES WITH SELECTOR LAYER AND METHODS OF FORMING THE SAME Public/Granted day:2024-01-25

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