Invention Grant
- Patent Title: Dual free layer read head having recessed sidewall insulator layer and method of making thereof
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Application No.: US18233800Application Date: 2023-08-14
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Publication No.: US12243565B2Publication Date: 2025-03-04
- Inventor: Chih-Ching Hu , Yung-Hung Wang , Ming Mao , Ming Jiang , Yukimasa Okada , Goncalo Baiao de Albuquerque
- Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
- Applicant Address: US CA San Jose
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Jose
- Agency: PATTERSON + SHERIDAN, LLP
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A two-dimensional magnetic recording (TDMR) read head includes a lower reader and an upper reader. Each of the lower reader and the upper reader may have a dual free layer (DFL) magnetic tunnel junction structure having first and second free layers located between lower and upper shields. A synthetic antiferromagnetic (SAF) structure is located on a side of each magnetic tunnel junction. A sidewall insulating layer is located between the lower soft bias layer of the SAF structure and the first free layer. The sidewall insulating layer can have a reduced height such that an upper soft bias layer of the SAF structure is in direct contact with a sidewall of the second free layer, or the upper portion of the sidewall insulating layer located between the upper soft bias layer of the SAF structure and the sidewall of the second free layer has a reduced thickness.
Public/Granted literature
- US20240404552A1 DUAL FREE LAYER READ HEAD HAVING RECESSED SIDEWALL INSULATOR LAYER AND METHOD OF MAKING THEREOF Public/Granted day:2024-12-05
Information query
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