Invention Grant
- Patent Title: Semiconductor device, memory system and method of controlling semiconductor device thereof
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Application No.: US17483508Application Date: 2021-09-23
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Publication No.: US12243606B2Publication Date: 2025-03-04
- Inventor: Hsin-Nan Chueh , Wenliang Chen , Chin-Hung Liu
- Applicant: AP MEMORY TECHNOLOGY CORPORATION
- Applicant Address: TW Hsinchu County
- Assignee: AP MEMORY TECHNOLOGY CORPORATION
- Current Assignee: AP MEMORY TECHNOLOGY CORPORATION
- Current Assignee Address: TW Hsinchu County
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: G11C29/44
- IPC: G11C29/44 ; G06F11/16 ; G11C29/42 ; H01L23/00

Abstract:
A memory device includes a memory die, a non-volatile memory circuit, and a logic die. The memory die includes a first memory space and a second memory space. The non-volatile memory circuit stores a repair table file corresponding to the first memory space. The logic die is coupled to the memory die and the non-volatile memory. The logic die selectively accesses the first memory space or the second memory space of the memory die according a comparing result of an input address and the repair table file. The memory die and is different from the logic die.
Public/Granted literature
- US20220208295A1 MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF CONTROLLING MEMORY DEVICE THEREOF Public/Granted day:2022-06-30
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