Invention Grant
- Patent Title: Indicating a status of a memory built-in self-test
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Application No.: US18392487Application Date: 2023-12-21
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Publication No.: US12243607B2Publication Date: 2025-03-04
- Inventor: Scott E. Schaefer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Harrity & Harrity, LLP
- Main IPC: G11C29/46
- IPC: G11C29/46 ; G11C7/10 ; G11C29/12 ; G11C29/44

Abstract:
Implementations described herein relate to performing a memory built-in self-test and indicating a status of the memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify, based on the one or more bits, that the memory built-in self-test is enabled. The memory device may set a DMI bit of the memory device to a first value and perform the memory built-in self-test based on identifying that the memory built-in self-test is enabled. The memory device may set the DMI bit of the memory device to a second value based on a completion of the memory built-in self-test.
Public/Granted literature
- US20240127902A1 INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST Public/Granted day:2024-04-18
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