Invention Grant
- Patent Title: Slurry and polishing method
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Application No.: US17278974Application Date: 2018-09-25
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Publication No.: US12247140B2Publication Date: 2025-03-11
- Inventor: Tomohiro Iwano , Takaaki Matsumoto , Tomomi Kukita , Tomoyasu Hasegawa
- Applicant: Resonac Corporation
- Applicant Address: JP Tokyo
- Assignee: Resonac Corporation
- Current Assignee: Resonac Corporation
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin & Flannery LLP
- International Application: PCT/JP2018/035445 WO 20180925
- International Announcement: WO2020/065723 WO 20200402
- Main IPC: C09G1/02
- IPC: C09G1/02 ; C01F17/235 ; C09K3/14 ; H01L21/304

Abstract:
A slurry for polishing a carbon-containing silicon oxide, the slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, and the second particles contain a cerium compound.
Public/Granted literature
- US20220033680A1 SLURRY AND POLISHING METHOD Public/Granted day:2022-02-03
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