- Patent Title: Memory repair circuit, a memory repair method, and a memory device
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Application No.: US18368086Application Date: 2023-09-14
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Publication No.: US12249384B2Publication Date: 2025-03-11
- Inventor: Hyunseok Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. CHAU & ASSOCIATES, LLC
- Priority: KR10-2023-0015034 20230203
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G11C29/12
Abstract:
A memory repair circuit of a memory module including a plurality of memory packages, the memory repair circuit including: a test circuit configured to test the plurality of memory packages to obtain fail information in each of the plurality of memory packages; and a redundancy analysis circuit configured to: obtain a redundant address count in each of the plurality of memory packages, determine a repair order of the plurality of memory packages based on the fail information and the redundant address count, and perform a virtual repair on the plurality of memory packages in the repair order to determine an address to be repaired in each of the plurality of memory packages.
Public/Granted literature
- US20240265987A1 MEMORY REPAIR CIRCUIT, A MEMORY REPAIR METHOD, AND A MEMORY DEVICE Public/Granted day:2024-08-08
Information query
