A memory system includes a nonvolatile memory and a control circuit. The nonvolatile memory includes a plurality of word lines, a plurality of bit lines, and a plurality of storage elements. The control circuit includes an ECC circuit that detects and corrects a data error stored in the plurality of storage elements, acquires first data by reading data stored in the plurality of storage elements of a page connected to the same word line with a first read voltage, acquires second data obtained by correcting the first data when the first data can be corrected by the ECC circuit, and writes data based on the second data to the plurality of storage elements of the page.