Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
-
Application No.: US18357300Application Date: 2023-07-24
-
Publication No.: US12249503B2Publication Date: 2025-03-11
- Inventor: Kiyohisa Ishibashi , Tsukasa Kamakura
- Applicant: Kokusai Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP2020-052448 20200324
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67
Abstract:
There is provided a technique that includes: forming a first film to have a first predetermined film thickness over a substrate by performing a first cycle a first predetermined number of times, the first cycle including non-simultaneously performing: (a1) forming an oxynitride film by supplying a first film-forming gas to the substrate; and (a2) changing the oxynitride film into a first oxide film by supplying a first oxidizing gas to the substrate to oxidize the oxynitride film.
Public/Granted literature
- US20230369043A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2023-11-16
Information query
IPC分类:
