Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17479100Application Date: 2021-09-20
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Publication No.: US12249570B2Publication Date: 2025-03-11
- Inventor: Katsuhiko Yoshihara
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: HSML P. C.
- Priority: JP2020-160625 20200925
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/31 ; H01L23/367

Abstract:
A semiconductor device includes: a first wiring layer having a first main surface facing a thickness direction; a second wiring layer having a second main surface facing the same side as the first main surface and located away from the first wiring layer; a first semiconductor element having a first main surface electrode and bonded to the first main surface; a second semiconductor element having a second main surface electrode and bonded to the second main surface; a first terminal electrically connected to the second main surface electrode; a first conductive member bonded to the first main surface electrode and the second main surface; and a second conductive member bonded to the second main surface electrode and the first terminal, wherein the first terminal is located away from the first wiring layer in the thickness direction, and the second conductive member overlaps the first wiring layer in the thickness direction.
Public/Granted literature
- US20220102264A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-31
Information query
IPC分类: