Invention Grant
- Patent Title: Semiconductor device having doped work function metal layer
-
Application No.: US18360416Application Date: 2023-07-27
-
Publication No.: US12249604B2Publication Date: 2025-03-11
- Inventor: Chih-Hsiung Huang , Chung-En Tsai , Chee-Wee Liu , Kun-Wa Kuok , Yi-Hsiu Hsiao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Maschoff Brennan
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/28 ; H01L21/8238 ; H01L27/092 ; H01L29/49 ; H01L29/66

Abstract:
A semiconductor device includes a substrate, a gate stack, and epitaxy structures. The substrate has a P-type region. The gate stack is over the P-type region of the substrate and includes a gate dielectric layer, a bottom work function (WF) metal layer, a top WF metal layer, and a filling metal. The bottom WF metal layer is over the gate dielectric layer. The top WF metal layer is over and in contact with the bottom WF metal layer. Dipoles are formed between the top WF metal layer and the bottom WF metal layer, and the dipoles direct from the bottom WF metal layer to the top WF metal layer. The filling metal is over the top WF metal layer. The epitaxy structures are over the P-type region of the substrate and on opposite sides of the gate stack.
Public/Granted literature
- US20230369331A1 SEMICONDUCTOR DEVICE HAVING DOPED WORK FUNCTION METAL LAYER Public/Granted day:2023-11-16
Information query
IPC分类: