Invention Grant
- Patent Title: Power device and fabrication method thereof
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Application No.: US17702831Application Date: 2022-03-24
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Publication No.: US12249647B2Publication Date: 2025-03-11
- Inventor: Chih-Chien Chang , Shen-De Wang , Cheng-Hua Yang , Linggang Fang , Jianjun Yang , Wei Ta
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202210149475.1 20220218
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L29/423 ; H01L29/66 ; H01L29/788

Abstract:
A power device includes a substrate, an ion well in the substrate, a body region in the ion well, a source doped region in the body region, a drain doped region in the ion well, and gates on the substrate between the source doped region and the drain doped region. The gates include a first gate adjacent to the source doped region, a second gate adjacent to the drain doped region, and a stacked gate structure between the first gate and the second gate.
Public/Granted literature
- US20230268437A1 POWER DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2023-08-24
Information query
IPC分类: