Invention Grant
- Patent Title: Radiation emitting semiconductor chip and method for producing a radiation emitting semiconductor chip
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Application No.: US17630534Application Date: 2020-07-28
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Publication No.: US12249679B2Publication Date: 2025-03-11
- Inventor: Fabian Kopp , Attila Molnar
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: VIERING, JENTSCHURA & PARTNER mbB
- Priority: DE102019120444.5 20190729
- International Application: PCT/EP2020/071250 WO 20200728
- International Announcement: WO2021/018884 WO 20210204
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/00 ; H01L33/62

Abstract:
A radiation emitting semiconductor chip may include a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, a first dielectric mirror layer arranged above the semiconductor layer sequence, and a second dielectric mirror layer arranged above the first dielectric mirror layer. The first dielectric mirror layer may have at least one first recess. A first current spreading layer may be arranged in the first recess and above the first dielectric mirror layer. The second dielectric mirror layer may have at least one second recess extending up to the first current spreading layer. The first recess may not overlap with the second recess in lateral direction in plan view. Furthermore, a method for producing a radiation emitting semiconductor chip is disclosed.
Public/Granted literature
- US20220278259A1 RADIATION EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION EMITTING SEMICONDUCTOR CHIP Public/Granted day:2022-09-01
Information query
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