There is provided a method and a system configured to obtain metrology data Dmetrology informative of a plurality of structural parameters of a semiconductor specimen, obtain a model informative of a relationship between at least some of said structural parameters and one or more electrical properties of the specimen, use the model and Dmetrology to determine, for at least one given electrical property of the specimen, one or more given structural parameters among the plurality of structural parameters, which affect the given electrical property according to an impact criterion, and generate a recipe for an examination tool, wherein the recipe enables a ratio between a first acquisition rate of data informative of the one or more given structural parameters, and a second acquisition rate of data informative of other structural parameters of the plurality of structural parameters, to meet a criterion.