Invention Grant
- Patent Title: Control method, semiconductor memory, and electronic device
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Application No.: US18156133Application Date: 2023-01-18
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Publication No.: US12254942B2Publication Date: 2025-03-18
- Inventor: Yoonjoo Eom , Lin Wang , Zhiqiang Zhang , Yuanyuan Gong
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN202210306571.2 20220325,CN202210501554.4 20220509
- Main IPC: G11C29/50
- IPC: G11C29/50

Abstract:
A control method includes: decoding a third Operand (OP) in a third Mode Register (MR) and a fourth OP in a first MR; and in response to the semiconductor memory being in a preset test mode, controlling, in a case where the third OP meets a first decoding condition, the impedance of a Data Mask (DM) pin to be a first value; or controlling, in a case where the third OP meets a second decoding condition, the impedance of the DM pin to be a second value according to the fourth OP; wherein the third OP is configured to indicate whether the DM pin is a test object in the preset test mode, and the fourth OP is configured to indicate whether the DM pin is enabled.
Public/Granted literature
- US20230307083A1 CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE Public/Granted day:2023-09-28
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