Invention Grant
- Patent Title: Standby exit for memory die stack
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Application No.: US17723798Application Date: 2022-04-19
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Publication No.: US12254948B2Publication Date: 2025-03-18
- Inventor: Hari Giduturi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/14 ; H01L25/065

Abstract:
A memory device standby procedure can include idling a first memory device in a low-power standby mode, the first memory device coupled to a memory interface that couples multiple memory devices to a host and includes a command line (CA) and a standby exit line (EX), and the first memory device can include a primary die coupled to multiple secondary dies using an intra-package bus. At the first memory device, the procedure can include waking receiver circuitry on the primary die in response to a state change on the standby exit line, and sampling the command line using logic circuitry on the primary die. When a wakeup message on the command line comprises a chip identification that corresponds to the first memory device, the procedure can include initiating a standby exit procedure for the first memory device.
Public/Granted literature
- US20230335165A1 STANDBY EXIT FOR MEMORY DIE STACK Public/Granted day:2023-10-19
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