Invention Grant
- Patent Title: Method for producing non-contiguous metal oxide semiconductors, of uniform and controlled size and density
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Application No.: US17780624Application Date: 2020-11-26
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Publication No.: US12255066B2Publication Date: 2025-03-18
- Inventor: Pierre-Vincent Guenery , Thierry Baron , Jeremy Moeyaert
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE GRENOBLE ALPES , INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON , UNIVERSITE CLAUDE BERNARD LYON 1 , ECOLE CENTRALE DE LYON , ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON
- Applicant Address: FR Paris; FR Paris; FR Saint Martin d'Heres; FR Villeurbanne; FR Villeurbanne; FR Ecully; FR Villeurbanne
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE GRENOBLE ALPES,INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON,UNIVERSITE CLAUDE BERNARD LYON 1,ECOLE CENTRALE DE LYON,ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE GRENOBLE ALPES,INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON,UNIVERSITE CLAUDE BERNARD LYON 1,ECOLE CENTRALE DE LYON,ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON
- Current Assignee Address: FR Paris; FR Paris; FR Saint Martin d'Heres; FR Villeurbanne; FR Villeurbanne; FR Ecully; FR Villeurbanne
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1913421 20191128
- International Application: PCT/EP2020/083488 WO 20201126
- International Announcement: WO2021/105273 WO 20210603
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C23C16/02 ; C23C16/40 ; C23C16/455 ; C23C16/56 ; H01L21/02

Abstract:
A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate whose greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour deposition, including successive steps carried out in a reactor configured for MOCVD deposition of nucleation and growth. The nucleation step includes forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on the top face of the substrate and oxidising the metal of the metal nuclei, to form oxidised nuclei and ensure stabilisation of the nuclei. The growth step includes depositing a metal by MOCVD using the metalorganic precursor, to form non-contiguous nanostructures by growth of the oxidised nanostructures, and oxidising the deposited metal of the nanostructures formed in the nucleation to form oxidised nanostructures.
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