Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17649099Application Date: 2022-01-27
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Publication No.: US12255125B2Publication Date: 2025-03-18
- Inventor: Chih-Cheng Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202110898158.5 20210805
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/532

Abstract:
A semiconductor structure includes a substrate, a via, a conductive pillar, and a core layer. The via is located in the substrate. The conductive pillar is located in the via, and the conductive pillar is provided with a groove extended inwards from an upper surface of the conductive pillar. The core layer is located in the groove, a Young modulus of the core layer is less than that of the conductive pillar.
Public/Granted literature
- US20230044396A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-02-09
Information query
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