Invention Grant
- Patent Title: Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof
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Application No.: US17579474Application Date: 2022-01-19
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Publication No.: US12255233B2Publication Date: 2025-03-18
- Inventor: Mario Giuseppe Saggio , Alessia Maria Frazzetto , Edoardo Zanetti , Alfio Guarnera
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: IT102021000001895 20210129
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/04 ; H01L29/08 ; H01L29/10 ; H01L29/16 ; H01L29/66 ; H01L29/78
Abstract:
A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.
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