Invention Grant
- Patent Title: Photodetector
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Application No.: US18005040Application Date: 2021-07-07
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Publication No.: US12255260B2Publication Date: 2025-03-18
- Inventor: Itaru Oshiyama , Yoshiki Ebiko
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: SHERIDAN ROSS P.C.
- International Application: PCT/JP2021/025543 WO 20210707
- International Announcement: WO2022/019111 WO 20220127
- Main IPC: H01L31/0236
- IPC: H01L31/0236 ; H01L31/0216 ; H01L31/18

Abstract:
A first photodetector according to an embodiment of the present disclosure includes: a substrate having a first surface that serves as a light-receiving surface and a second surface opposed to the first surface, and including an uneven structure provided on the first surface and a light-receiving section that performs photoelectric conversion to generate electric charge corresponding to an amount of light reception for each pixel; a passivation film stacked on the first surface of the substrate; and a reflectance adjustment layer including a plurality of protrusions configuring the uneven structure and the passivation film embedded in a plurality of recesses configuring the uneven structure, and having a refractive index between the substrate and the passivation film.
Public/Granted literature
- US20230335656A1 PHOTODETECTOR Public/Granted day:2023-10-19
Information query
IPC分类: