Invention Grant
- Patent Title: Methods of manufacturing acoustic wave device with anti-reflection layer
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Application No.: US18511405Application Date: 2023-11-16
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Publication No.: US12255600B2Publication Date: 2025-03-18
- Inventor: Satoru Matsuda , Tatsuya Fujii , Yoshiro Kabe , Kenji Nagano
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US CA Irvine
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H03H3/08
- IPC: H03H3/08 ; H03H9/02 ; H03H9/145 ; H03H9/25 ; H03H9/64 ; H03H9/72

Abstract:
An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.
Public/Granted literature
- US20240088865A1 METHODS OF MANUFACTURING ACOUSTIC WAVE DEVICE WITH ANTI-REFLECTION LAYER Public/Granted day:2024-03-14
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