Invention Grant
- Patent Title: Surface acoustic wave device
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Application No.: US17903757Application Date: 2022-09-06
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Publication No.: US12255610B2Publication Date: 2025-03-18
- Inventor: Shoji Kakio , Noritoshi Kimura
- Applicant: PIEZO STUDIO INC. , UNIVERSITY OF YAMANASHI
- Applicant Address: JP Miyagi; JP Yamanashi
- Assignee: PIEZO STUDIO INC.,UNIVERSITY OF YAMANASHI
- Current Assignee: PIEZO STUDIO INC.,UNIVERSITY OF YAMANASHI
- Current Assignee Address: JP Miyagi; JP Yamanashi
- Agency: WOMBLE BOND DICKINSON (US) LLP
- Priority: JP2021-146226 20210908
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/145
Abstract:
A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.
Public/Granted literature
- US20230071292A1 SURFACE ACOUSTIC WAVE DEVICE Public/Granted day:2023-03-09
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