Invention Grant
- Patent Title: Magnetoresistive random access memory and method for fabricating the same
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Application No.: US18595376Application Date: 2024-03-04
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Publication No.: US12256556B2Publication Date: 2025-03-18
- Inventor: Hung-Chan Lin , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202110613576.5 20210602
- Main IPC: H10B61/00
- IPC: H10B61/00 ; H10N50/01 ; H10N50/80
Abstract:
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spin orbit torque (SOT) layer on the MTJ, a passivation layer around the MTJ, and a second SOT layer on the first SOT layer and the passivation layer. Preferably, a top surface of the passivation layer is lower than a top surface of the first SOT layer.
Public/Granted literature
- US20240215260A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2024-06-27
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