Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17826929Application Date: 2022-05-27
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Publication No.: US12256580B2Publication Date: 2025-03-18
- Inventor: Toshiya Fukudome , Koji Nakatsu , Shigeo Hayashi
- Applicant: Nuvoton Technology Corporation Japan
- Applicant Address: JP Kyoto
- Assignee: Nuvoton Technology Corporation Japan
- Current Assignee: Nuvoton Technology Corporation Japan
- Current Assignee Address: JP Kyoto
- Agency: Rimon P.C.
- Priority: JP2019-223986 20191211
- Main IPC: H10H20/854
- IPC: H10H20/854 ; H10H20/856

Abstract:
A semiconductor device includes: a mounting substrate; a thin cured silicone resin material film above and in contact with the mounting substrate; and a first cured silicone resin material in contact with the thin cured silicone resin material film. In the semiconductor device, an oxygen content per unit volume in the whole region in a thickness direction of the thin cured silicone resin material film is higher than an oxygen content per unit volume in the whole region in the thickness direction of the first cured silicone resin material.
Public/Granted literature
- US20220293831A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-09-15
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