Invention Grant
- Patent Title: Method and system for adjusting the gap between a wafer and a top plate in a thin-film deposition process
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Application No.: US17461004Application Date: 2021-08-30
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Publication No.: US12266579B2Publication Date: 2025-04-01
- Inventor: Sheng-Chan Li , Sheng-Chau Chen , Cheng-Hsien Chou , Cheng-Yuan Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/46 ; C23C16/50 ; C23C16/52 ; H01J37/32 ; H01L21/66
Abstract:
A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a gap sensor configured to generate sensor signals indicative of a gap between the wafer and the top plate. The system includes a control system configured to adjust the gap during the thin-film deposition process responsive to the sensor signals.
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