Invention Grant
- Patent Title: Through vias of semiconductor structure and method of forming thereof
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Application No.: US18324643Application Date: 2023-05-26
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Publication No.: US12266592B2Publication Date: 2025-04-01
- Inventor: Yuan-Yang Hsiao , Dian-Hau Chen , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/482 ; H01L23/485 ; H01L23/522 ; H01L23/528

Abstract:
A semiconductor structure includes a semiconductor substrate and an interconnect structure on the semiconductor structure. The interconnect structure includes a first layer, a second layer over the first layer, a third layer over the second layer, and a fourth layer over the third layer. A first through via extends through the semiconductor substrate, the first layer, and the second layer. A second through via extends through the third layer and the fourth layer. A bottom surface of the second through via contacts a top surface of the first through via.
Public/Granted literature
- US20230298972A1 THROUGH VIAS OF SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF Public/Granted day:2023-09-21
Information query
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