Invention Grant
- Patent Title: Method of forming semiconductor device having at least one via including concave portions on sidewall
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Application No.: US18363733Application Date: 2023-08-02
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Publication No.: US12266593B2Publication Date: 2025-04-01
- Inventor: Ting-Li Yang , Wen-Hsiung Lu , Jhao-Yi Wang , Fu Wei Liu , Chin-Yu Ku
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/768 ; H01L23/48

Abstract:
A semiconductor device includes a substrate, at least one via, a liner layer and a conductive layer. The substrate includes an electronic circuitry. The at least one via passes through the substrate. The at least one via includes a plurality of concave portions on a sidewall thereof. The liner layer fills in the plurality of concave portions of the at least one via. The conductive layer is disposed on the sidewall of the at least one via, covers the liner layer, and extends onto a surface of the substrate. The thickness of the conductive layer on the sidewall of the at least one via is varied.
Public/Granted literature
- US20230395468A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2023-12-07
Information query
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