Invention Grant
- Patent Title: Semiconductor device with source/drain contact formed using bottom-up deposition
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Application No.: US18331917Application Date: 2023-06-08
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Publication No.: US12266688B2Publication Date: 2025-04-01
- Inventor: Sung-Li Wang , Mrunal A. Khaderbad , Yasutoshi Okuno
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/02 ; H01L21/285 ; H01L21/762 ; H01L21/768 ; H01L21/8238 ; H01L23/535 ; H01L27/092 ; H01L29/165 ; H01L29/417 ; H01L29/45 ; H01L29/66 ; H01L21/311
Abstract:
A semiconductor device includes first and second semiconductor fins extending from a substrate, and first and second epitaxial layers wrapping around the first and second semiconductor fins, respectively. The semiconductor device further includes a contact plug over the first epitaxial layer and the second epitaxial layer. The contact plug includes a first interfacial layer over the first epitaxial layer and a second interfacial layer over the second epitaxial layer. The first and second interfacial layers include a noble metal element and a Group IV element.
Public/Granted literature
- US20230335592A1 SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN CONTACT FORMED USING BOTTOM-UP DEPOSITION Public/Granted day:2023-10-19
Information query
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