Invention Grant
- Patent Title: Power amplifier circuit, power amplifier device, and RF circuit module
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Application No.: US17549626Application Date: 2021-12-13
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Publication No.: US12267050B2Publication Date: 2025-04-01
- Inventor: Masatoshi Hase
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker Brackett PLLC
- Priority: JP2020-206717 20201214
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/195 ; H03F3/24

Abstract:
A power amplifier circuit includes an amplifier transistor which amplifies a radio frequency signal applied to its base and outputs the amplified signal; a resistance element having a first end, and a second end electrically connected to the base of the amplifier transistor; a first bias transistor having a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to the first end of the resistance element and which supplies a bias current to the base of the amplifier transistor through the resistance element; and a second bias transistor having an emitter electrically connected to the emitter of the first bias transistor and the first end of the resistance element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied.
Public/Granted literature
- US20220190795A1 POWER AMPLIFIER CIRCUIT, POWER AMPLIFIER DEVICE, AND RF CIRCUIT MODULE Public/Granted day:2022-06-16
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