Invention Grant
- Patent Title: Control circuit for bypassing diode current and control method
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Application No.: US18011527Application Date: 2020-09-09
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Publication No.: US12267923B2Publication Date: 2025-04-01
- Inventor: Chuan Xiao
- Applicant: SHANGHAI HUIRUI SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI HUIRUI SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee: SHANGHAI HUIRUI SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shanghai
- Agency: IPro, PLLC
- Priority: CN202010608456.1 20200629,CN202021235241.1 20200629
- International Application: PCT/CN2020/114133 WO 20200909
- International Announcement: WO2022/000774 WO 20220106
- Main IPC: H05B45/40
- IPC: H05B45/40 ; H05B45/345

Abstract:
A control circuit for bypassing a diode current and a control method are provided; the control circuit includes a main module, a diode-current sensing module, a driving module; the diode-current sensing module is for sensing a current flowing through a main diode to generate a sensing current; the driving module is for generating a driving current proportional to the sensing current to drive a main switching transistor to be turned on; the main module, the diode-current sensing module, the driving module form a negative feedback loop to reduce the current flowing through the main diode to a preset value. The present disclosure solves problems in the related art, such as heat generation caused by large currents flowing through a body diode or flyback diode when the main switching transistor is in an off cycle, and the control circuit being out of control due to large currents introduced into a substrate.
Public/Granted literature
- US20230284353A1 CONTROL CIRCUIT FOR BYPASSING DIODE CURRENT AND CONTROL METHOD Public/Granted day:2023-09-07
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